參數(shù)資料
型號: IRHQ9110
廠商: International Rectifier
英文描述: 100V, 4 P-Channel Surface Mount Radiation Hardened Power MOSFET(100V,表貼型抗輻射功率四P溝道MOS場效應管)
中文描述: 100V的,4個P -通道表面安裝抗輻射功率MOSFET(100V的,表貼型抗輻射功率四馬鞍山P溝道場效應管)
文件頁數(shù): 6/8頁
文件大?。?/td> 117K
代理商: IRHQ9110
IRHQ9110
Pre-Irradiation
6
www.irf.com
Fig 10a.
Switching Time Test Circuit
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
25
50
T , Case Temperature (°
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
-
D
0.1
0.00001
1
10
100
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
DS
-12V
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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