參數(shù)資料
型號: IRIS-A6131
廠商: International Rectifier
英文描述: INTEGRATED SWITCHER
中文描述: 多功能開關(guān)
文件頁數(shù): 1/7頁
文件大?。?/td> 396K
代理商: IRIS-A6131
www.irf.com 1
IRIS-A6131
Features
Small sized 8-pin DIP type full molded package, optimum IC for low-
height SMPS
Off-timer circuit is provided on the monolithic control IC
Low start-up circuit current (10uA max)
Low circuit current at operation (1.5mA typ)
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in Start-up circuit (the power loss in the start-up circuit is
reduced by cutting off the start-up circuit after the IC starts its
operation.)
Auto Burst Stand-by (realizing input power<0.1W at no load)
Auto Bias Function (stable burst operation without the interference on
transformer)
Two operational modes by auto switching functions
For normal operation: PRC mode
For stand-by operation (at light load): Burst mode
Built-in Leading Edge Blanking Function
Built-in constant voltage drive circuit
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
INTEGRATED SWITCHER
Package Outline
8 Lead PDIP
Descriptions
IRIS-A6131 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC
fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC
operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply
system reducing external component count and simplifying the circuit design.
Note: PRC is abbreviation for “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
ACinput(V)
Pout(W)
Note 1
IRIS-A6131
500
3.95
Ω
100/120
±
15%
10
Key Specifications
D
D
OCP
FB
Vcc
GND
2
1
3
4
5
7
8
6
Startup
NC
IRIS-A6
1
3
1
Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by
approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the
Pout (W) shall become lower than that of above value.
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