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參數(shù)資料
| 型號(hào)： | IRKF102 |
| 廠商： | International Rectifier |
| 英文描述： | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 中文描述： | 快速晶閘管/二極管和晶閘管/晶閘管 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 209K |
| 代理商： | IRKF102 |
IRK.F102.. Series
7
Bulletin I27097 rev. A 09/97
www.irf.com
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
20
40
60
80
100
120
140
160
180
200
10
20
30
40
50
60
70
80
90 100
M
μ
Rate Of Fall Of On-state C urrent - di/dt (A/
μs)
I = 500 A
300 A
200 A
50 A
100 A
IRK.F102.. Series
T = 125
°C
20
40
60
80
100
120
140
160
10
20
30
40
50
60
70
80
90 100
M
Rate Of Fall Of On-state C urrent - di/dt (A/
μs)
IRK.F102.. Series
T = 125
°C
I = 500 A
300 A
200 A
100 A
50 A
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
1000
2500
5000
Pulse Basewidth (
μs)
P
IRK.F102.. Series
Sinusoidal Pulse
T = 90
°C
150
Snubber circ uit
R = 47 ohms
C = 0.22 μF
V = 80% V
DRM
tp
1E4
1E1
1E2
1E3
1E4
50 Hz
400
1000
2500
5000
Pulse Basewidth (
μs)
IRK.F102.. Series
Sinusoidal Pulse
T = 60
°C
Snubber circuit
R = 47 ohms
C = 0.22 μF
V = 80% V
s
DRM
150
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
1000
2500
5000
Pulse Basewidth (
μs)
P
150
Snubber circuit
R = 47 ohms
C = 0.22
μF
V = 80% V
s
DRM
IRK.F102.. Series
Tra pezoidal Pulse
T = 90°C, di/dt 50A/μs
tp
1E4
1E1
1E2
1E3
1E4
50 Hz
400
1000
2500
5000
Pulse Basewidth (
μs)
Snubber circuit
R = 47 ohms
C = 0.22
μF
V = 80% V
s
DRM
150
IRK.F102.. Series
Trapezoidal Pulse
T = 90°C , di/dt 100A/μs
tp
1E1
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