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參數(shù)資料
| 型號： | IRKF102 |
| 廠商： | International Rectifier |
| 英文描述： | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 中文描述： | 快速晶閘管/二極管和晶閘管/晶閘管 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 209K |
| 代理商： | IRKF102 |
IRK.F102.. Series
8
Bulletin I27097 rev. A 09/97
www.irf.com
Fig. 15 - Gate Characteristics
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
1E2
1E3
1E4
1E1
1E2
1E3
1E4
1E4
1E1
50 Hz
400
1000
2500
5000
Pulse Basewidth (
μs)
P
150
Snubber c irc uit
R = 47 ohms
C = 0.22
μF
V = 80% V
DRM
IRK.F102.. Series
Trapezoidal Pulse
T = 60
°C, di/dt 50A/μs
tp
1E2
1E3
1E4
50 Hz
400
1000
2500
5000
Pulse Basewidth (
μs)
150
Snubber c ircuit
R = 47 ohms
C = 0.22
μF
V = 80% V
DRM
IRK.F102.. Series
Trapezoidal Pulse
T = 60
°C , di/dt 100A/μs
tp
1E1
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
1E4
1E1
1
0.1
Pulse Basewidth (
μs)
P
IRK.F102.. Series
Sinusoidal pulse
10 joules per pulse
5
2.5
0.5
0.25
0.05
tp
1E2
1E3
1E4
1
0.1
Pulse Basewidth (
μs)
IRK.F102.. Series
Trapezoidal Pulse
di/dt 50A/
μs
10 joules per pulse
5
2.5
0.5
0.25
0.05
tp
1E1
0.1
1
10
100
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
°
T
T
(1)
(2)
(3)
Instantaneous Gate C urrent (A)
I
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1
μs
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
Rectangular g ate pulse
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
IRK.F102.. Series Frequenc y Limited by PG (AV)
tr<=1 μs
(4)
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