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參數(shù)資料
| 型號： | IRKTF82-04HLN |
| 廠商： | International Rectifier |
| 英文描述： | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 中文描述： | 快速晶閘管/二極管和晶閘管/晶閘管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | IRKTF82-04HLN |
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
2
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
V
RSM
, maximum non-
repetitive peak rev. voltage
V
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
Type number
04
400
400
08
800
800
I
T(AV)
Maximum average on-state current
81
A
180° conduction, half sine wave
@ Case temperature
90
°C
I
T(RMS)
Maximum RMS current
180
A
T
C
= 90°C, as AC switch
I
TSM
Maximum peak, one-cycle,
2200
A
t = 10ms
No voltage
non-repetitive surge current
2300
t = 8.3ms
reapplied
1850
t = 10ms
100% V
RRM
reapplied
1950
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
24.2
KA
2
s
t = 10ms
No voltage
Initial T
J
= 125°C
22.1
t = 8.3ms
reapplied
17.1
t = 10ms
100% V
RRM
reapplied
15.6
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
242
KA
2
√
s
t = 0 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
1.20
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
1.24
r
t1
Low level value of on-state slope resistance
2.18
mW
r
t2
High level value of on-state slope resistance
2.00
V
TM
Maximum on-state voltage drop
1.96
V
I
H
Maximum holding current
600
mA
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6
, Ig
= 1A
I
L
Typical latching current
1000
mA
Parameter
IRK.F82..
Units Conditions
On-state Conduction
Frequency f
Units
50Hz
160
265
250
400
2240
3100
A
400Hz
200
320
290
475
1070
1550
A
2500Hz
150
240
260
400
370
550
A
5000Hz
10000Hz
135
90
215
160
235
190
355
275
235
-
355
-
A
A
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
80% V
DRM
80% V
DRM
80% V
DRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/μs
Case temperature
90
60
90
60
90
60
°C
Equivalent values for RC circuit
22
/ 0.15 μF
22
/ 0.15 μF
22
/ 0.15 μF
I
TM
I
TM
180
o
el
100μs
I
TM
180
o
el
Current Carrying Capacity
IRK.F82..
30
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