參數(shù)資料
型號(hào): IRL5NJ024
廠商: International Rectifier
英文描述: LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
中文描述: 邏輯電平HEXFET功率MOSFET的表面貼裝系統(tǒng)(SMD - 0.5)
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 115K
代理商: IRL5NJ024
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
17
11
68
35
0.28
±16
56
11
3.5
4.3
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 s)
2.6
g
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
o
C
A
LOGIC LEVEL
HEXFET
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRL5NJ024
55V, N-CHANNEL
7/13/01
www.irf.com
1
SMD-0.5
Product Summary
Part Number
BVDSS
R
DS(on)
I
D
IRL5NJ024 55V 0.06
17A
Features:
Logic Level Gate Drive
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
For footnotes refer to the last page
PD - 93955A
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