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參數(shù)資料
| 型號： | IRLF120 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS THRU-HOLE (TO-39) |
| 中文描述： | 的HEXFET三極管通孔（到39） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 548K |
| 代理商： | IRLF120 |
IRLF120
2
www.irf.com
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
— 175 Typical socket mount.
Units
Test Conditions
RthJC
RthJA
6.25
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
5.3
21
2.5
220
1.1
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = 5.3A, VGS = 0V
Tj = 25°C, IF = 5.3A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.13
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 250
μ
A
BVDSS
V
V/°C
—
—
1.0
3.1
—
—
—
— 0.42
VGS = 4.0V, ID = 2.7A
—
2.0 V VDS = VGS, ID = 250
μ
A
—
—
S (
)
VDS = 50V, IDS = 3.2A
—
250 VDS= 100V, VGS=0V
—
1000
μA
0.35 VGS = 5.0V, ID = 3.2A
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS =5.0V, ID = 5.3A
VDS= 80V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
13
2.4
7.1
13 VDD = 50V, ID = 5.3A,
53
VGS =5.0V, RG = 18
30
27
—
nH
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
nA
nC
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
480
150
30
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
ns
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