參數(shù)資料
型號(hào): IRLL024Z
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET
中文描述: 汽車(chē)MOSFET的
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 273K
代理商: IRLL024Z
IRLL024Z
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 60m
I
D
= 5.0A
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95886A
SOT-223
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 150°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
A
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
V
GS
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Operating Junction and
mJ
A
mJ
T
J
T
STG
Thermal Resistance
Storage Temperature Range
°C
Parameter
Typ.
–––
–––
Max.
45
120
Units
R
θ
JA
R
θ
JA
Junction-to-Ambient (PCB mount, steady state)
Junction-to-Ambient (PCB mount, steady state)
°C/W
-55 to + 150
1.0
0.02
± 16
Max.
5.0
4.0
40
2.8
38
21
See Fig.12a, 12b, 15, 16
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