參數(shù)資料
型號(hào)： IRLL024Z
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁數(shù)： 2/10頁
文件大?。?/td> 273K
代理商： IRLL024Z
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 4.8mH
R
G
= 25
, I
AS
= 3.0A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
When mounted on 1 inch square copper board.
When mounted on FR-4 board using minimum
recommended footprint.
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Min.
55
–––
–––
–––
–––
1.0
7.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.049
–––
48
60
–––
80
–––
100
–––
3.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
7.0
11
1.5
–––
4.0
–––
8.6
–––
33
–––
20
–––
15
–––
380
–––
66
–––
36
–––
220
–––
53
–––
93
–––
V
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
m
V
GS(th)
gfs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
nC
ns
pF
Min.
–––
Typ. Max. Units
–––
5.0
A
–––
–––
40
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
15
9.1
1.3
23
14
V
ns
nC
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
T
J
= 25°C, I
F
= 3.0A, V
DD
= 28V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.0A
V
GS
= 5.0V, I
D
= 3.0A
V
GS
= 4.5V, I
D
= 3.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 3.0A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
MOSFET symbol
V
DD
= 28V
I
D
= 3.0A
R
G
= 56
V
GS
= 5.0V
V
GS
= 0V
T
J
= 25°C, I
S
= 3.0A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
I
D
= 3.0A
V
DS
= 44V
V
GS
= 5.0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRLL024ZTRPBF 功能描述:MOSFET MOSFT 55V 5A 60mOhm 7nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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