- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377535 > IRLR2908PBF (International Rectifier) HEXFET㈢ Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRLR2908PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 329K |
| 代理商： | IRLR2908PBF |
www.irf.com
1
IRLR2908PbF
IRLU2908PbF
HEXFET
Power MOSFET
Description
Specifically designed for Automotive applications, this HEXFET Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C junction operating
temperature, low R
θ
JC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
S
D
G
V
DSS
= 80V
R
DS(on)
= 28m
I
D
= 30A
D-Pak
IRLR2908
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
PD - 95552A
I-Pak
IRLU2908
Units
A
W
Linear Derating Factor
Gate-to-Source Voltage
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
A
mJ
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
V/ns
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.3
40
110
Units
°C/W
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
120
0.77
± 16
180
250
See Fig.12a,12b,15,16
Max.
39
28
30
150
300 (1.6mm from case )
-55 to + 175
2.3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLU2908PBF | HEXFET㈢ Power MOSFET |
| IRLR3103 | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| IRLR3105PBF | AUTOMOTIVE MOSFET |
| IRLU3105PbF | AUTOMOTIVE MOSFET |
| IRLR3105 | AUTOMOTIVE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLR2908TRLPBF | 功能描述:MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR2908TRPBF | 功能描述:MOSFET 80V 1 N-CH HEXFET 28mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3101 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRLR3103 | 功能描述:MOSFET N-CH 30V 55A DPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRLR3103PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。