參數(shù)資料
型號(hào)： IRS2540
廠商： International Rectifier
英文描述： IRPLLED1 High Voltage LED Driver using the IRS2540
中文描述： IRPLLED1高電壓LED驅(qū)動(dòng)器采用IRS2540
文件頁(yè)數(shù)： 14/28頁(yè)
文件大小： 839K
代理商： IRS2540
14
RD-0608
www.irf.com
Fig. 20: Low-side FET and low-side diode comparison, V
in
= 100 V, I
out
= 1.5 A, V
out
= 17 V
The most efficient solution would be to put the FET in parallel with the diode in the low-side position.
In this case, during the deadtime, instead of the body diode freewheeling, the additional diode would
be conducting. This will always be the case as long as the forward drop of the external diode is less
than that of the body diode. If costs permit, a diode in parallel with an IGBT could also be an option.
A detailed, evaluation of system needs and cost should be performed prior to choosing a FET or diode
for the low-side. Although a diode is cheaper, in certain cases the associated power losses may require
a heatsink, nullifying the cost reduction of using a diode. Likewise there are conditions where a FET
may prove less efficient, in which case more money will be spent on the FET as well as the heatsink to
keep it cool. The evaluation board is provided with a freewheeling diode and the footprint for a low-
side FET has been provided to replace the diode with a FET if the application requires it. It is not
recommended to replace the diode with a FET for the 1 A and 1.5 A operation because of the
associated reverse recovery power losses. If replacing the diode with a FET is a requirement, it might
be beneficial to move the diode heatsink to the high-side FET.
In terms of choosing the correct FET, it is best to use a FET rated as low as possible considering what
is needed in the application. FET parameters degrade as the voltage ratings go up. Therefore, if a 600
V FET is used in a 200 V application, extra losses may be incurred due to a component that far
exceeds the requirements. If using two FETs, the next parameter to be considered is the reverse
recovery time. Obviously FETs will not have a reverse recovery time comparable to diodes, but a
good FET reverse recovery time will be in the order of 150 ns to 200 ns. The two remaining
parameters to consider are direct trade-offs of each other, on resistance and gate charge. If the FET has
a rather low gate capacitance, the die size will be small, but this will result in a larger on resistance
which could potentially be a problem for high current applications. On the other hand, if the FET has a
large gate capacitance, the die will be large and the FET will have a low on resistance, but it will be
more difficult to turn on the FET which will also stress the IC. There has to be a direct compromise
between the two, typically the best solution is a FET with a relatively low R
DS,on
and a medium sized
gate capacitance, much like the device chosen for this application
6.
V
CC
supply
Since the IRS2540 (IRS2541) is rated for 200 V (600 V), V
BUS
can reach values of this magnitude. If
only a supply resistor to V
BUS
is used, it will experience high power losses. For higher voltage
相關(guān)PDF資料
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