參數(shù)資料
型號: IS41C4100-60JI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 1M X 4 EDO DRAM, 60 ns, PDSO20
封裝: 0.300 INCH, SOJ-20
文件頁數(shù): 18/19頁
文件大小: 143K
代理商: IS41C4100-60JI
IS41C4100
IS41LV4100
ISSI
18
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
09/10/01
HIDDEN REFRESH CYCLE (
WE
= HIGH;
OE
= LOW)
(1)
CBR
REFRESH CYCLE (Addresses;
WE
,
OE
= DON'T CARE)
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE
= LOW and
OE
= HIGH.
2. t
OFF
is referenced from rising edge of
RAS
or
CAS
, whichever occurs last.
t
RAS
t
RAS
t
RP
t
RP
I/O
CAS
RAS
Open
t
CP
t
RPC
t
CSR
t
CHR
t
RPC
t
CSR
t
CHR
t
RAS
t
RAS
t
RP
CAS
RAS
t
CRP
t
RCD
t
RSH
t
CHR
t
AR
t
ASC
t
RAD
t
RAH
ADDRESS
Row
Column
t
ASR
t
RAL
t
CAH
I/O
Open
Open
Valid Data
t
AA
t
CAC
t
RAC
t
CLZ
t
OFF
(2)
OE
t
OE
t
ORD
t
OD
Don't Care
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