參數(shù)資料
型號(hào): IS41C4100-60JI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 1M X 4 EDO DRAM, 60 ns, PDSO20
封裝: 0.300 INCH, SOJ-20
文件頁數(shù): 3/19頁
文件大?。?/td> 143K
代理商: IS41C4100-60JI
IS41C4100
IS41LV4100
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
09/10/01
3
TRUTH TABLE
Function
RAS
CAS
WE
OE
Address t
R
/t
C
I/O
Standby
H
H
X
X
X
High-Z
Read: Word
L
L
H
L
ROW/COL
D
OUT
Read: Lower Byte
L
L
H
L
ROW/COL
Lower Byte, D
OUT
Upper Byte, High-Z
Read: Upper Byte
L
H
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, D
OUT
Write: Word (Early Write)
L
L
L
X
ROW/COL
D
IN
Write: Lower Byte (Early Write)
L
L
L
X
ROW/COL
Lower Byte, D
IN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, D
IN
Read-Write
(1,2)
L
L
H
L
H
L
L
H
H
ROW/COL
D
OUT
, D
IN
EDO Page-Mode Read
(2)
D
OUT
1st Cycle:
L
L
ROW/COL
2nd Cycle:
Any Cycle:
L
L
H
L
L
H
H
L
H
L
H
L
H
H
L
L
NA/COL D
OUT
NA/NA
D
OUT
EDO Page-Mode Write
(1)
1st Cycle:
2nd Cycle:
L
L
L
L
X
X
ROW/COL, D
IN
NA/COL D
IN
EDO Page-Mode
D
OUT
, D
IN
Read-Write
(1,2)
1st Cycle:
L
H
L
L
H
ROW/COL
2nd Cycle:
L
H
L
L
H
L
H
L
H
L
NA/COL D
OUT
, D
IN
Hidden Refresh
2)
D
OUT
Read
L
H
L
ROW/COL
Write
L
H
L
L
L
X
ROW/COL
D
OUT
RAS
-Only Refresh
L
H
X
X
ROW/NA
High-Z
CBR Refresh
(3)
H
L
L
X
X
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
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