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| 型號： | IS41C44002 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K）) |
| 中文描述： | 4米× 4的DRAM與江戶頁面模式（5V的，4米× 4帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)隨機(jī)存儲器（刷新2k）的） |
| 文件頁數(shù)： | 7/19頁 |
| 文件大?。?/td> | 158K |
| 代理商： | IS41C44002 |
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. C
09/29/00
7
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
t
RWL
t
CWL
t
WCS
t
DHR
t
ACH
Parameter
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 24)
Output Disable Delay from
WE
CAS
Setup Time (CBR REFRESH)
(20, 25)
CAS
Hold Time (CBR REFRESH)
( 21, 25)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Auto Refresh Period
Min.
13
8
0
39
15
Max.
—
—
—
—
—
Min.
15
10
0
39
15
Max.
—
—
—
—
—
Units
ns
ns
ns
ns
ns
t
OEH
8
—
10
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
8
—
—
—
—
0
10
133
77
—
—
—
—
ns
ns
ns
ns
108
64
t
CWD
t
AWD
t
PC
26
39
20
—
—
—
32
47
25
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
50
—
56
100K
30
—
60
—
68
100K
35
—
ns
ns
ns
t
COH
t
OFF
5
0
—
12
5
0
—
15
ns
ns
t
WHZ
t
CSR
t
CHR
t
ORD
3
5
8
0
10
—
—
—
3
5
10
0
10
—
—
—
ns
ns
ns
ns
t
REF
2,048 Cycles
4,096 Cycles
—
—
1
32
64
50
—
—
1
32
64
50
ms
t
T
Transition Time (Rise or Fall)
(2, 3)
ns
AC TEST CONDITIONS
Output load:
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V
Two TTL Loads and 50 pF
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| IS41C44004 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 4K）) |
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| IS41LV44004 | 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 4K）) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41C44002-50J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41C44002-50T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41C44002-50TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41C44002-60J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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