- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377548 > IS41C44002 (Integrated Silicon Solution, Inc.) 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM(刷新 2K）) PDF資料下載
參數(shù)資料
| 型號： | IS41C44002 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM(刷新 2K）) |
| 中文描述： | 4米× 4的DRAM與江戶頁面模式（5V的，4米× 4帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)隨機(jī)存儲器（刷新2k）的） |
| 文件頁數(shù)： | 8/19頁 |
| 文件大小： | 158K |
| 代理商： | IS41C44002 |
8
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. C
09/29/00
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycle (
RAS
-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. V
IH
(MIN) and V
IL
(MAX) are reference levels for measuring timing of input signals. Transition times, are measured between V
IH
and
V
IL
(or between V
IL
and V
IH
) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between V
IH
and V
IL
(or between V
IL
and V
IH
) in a
monotonic manner.
4. If
CAS
and
RAS
= V
IH
, data output is High-Z.
5. If
CAS
= V
IL
, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 50 pF.
7. Assumes that t
RCD
- t
RCD
(MAX). If t
RCD
is greater than the maximum recommended value shown in this table, t
RAC
will increase by the
amount that t
RCD
exceeds the value shown.
8. Assumes that t
RCD
t
RCD
(MAX).
9. If
CAS
is LOW at the falling edge of
RAS
, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data
output buffer,
CAS
and
RAS
must be pulsed for t
CP
.
10. Operation with the t
RCD
(MAX) limit ensures that t
RAC
(MAX) can be met. t
RCD
(MAX) is specified as a reference point only; if t
RCD
is
greater than the specified t
RCD
(MAX) limit, access time is controlled exclusively by t
CAC
.
11. Operation within the t
RAD
(MAX) limit ensures that t
RCD
(MAX) can be met. t
RAD
(MAX) is specified as a reference point only; if t
RAD
is
greater than the specified t
RAD
(MAX) limit, access time is controlled exclusively by t
AA
.
12. Either t
RCH
or t
RRH
must be satisfied for a READ cycle.
13. t
OFF
(MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to V
OH
or V
OL
.
14. t
WCS
, t
RWD
, t
AWD
and t
CWD
are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If t
WCS
t
WCS
(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If t
RWD
t
RWD
(MIN),
t
AWD
t
AWD
(MIN) and t
CWD
t
CWD
(MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected
cell. If neither of the above conditions is met, the state of I/O (at access time and until
CAS
and
RAS
or
OE
go back to V
IH
) is
indeterminate.
OE
held HIGH and
WE
taken LOW after
CAS
goes LOW result in a LATE WRITE (
OE
-controlled) cycle.
15. Output parameter (I/O) is referenced to corresponding
CAS
input.
16. During a READ cycle, if
OE
is LOW then taken HIGH before
CAS
goes HIGH, I/O goes open. If
OE
is tied permanently LOW, a LATE
WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as
WE
going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both t
OD
and t
OEH
met (
OE
HIGH during WRITE cycle) in order to ensure
that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if
CAS
remains LOW and
OE
is taken back to LOW after t
OEH
is met.
19. The I/Os are in open during READ cycles once t
OD
or t
OFF
occur.
20. Determined by falling edge of
CAS
.
21. Determined by rising edge of
CAS
.
22. These parameters are referenced to
CAS
leading edge in EARLY WRITE cycles and
WE
leading edge in LATE WRITE or READ-
MODIFY-WRITE cycles.
23.
CAS
must meet minimum pulse width.
24. The 3 ns minimum is a parameter guaranteed by design.
25. Enables on-chip refresh and address counters.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41C44004 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM(刷新 4K）) |
| IS41LV44002 | 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM(刷新 2K）) |
| IS41LV44004 | 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM(刷新 4K）) |
| IS41C44052 | 4M x 4 DRAM With Fast Page Mode(5V,4M x 4 帶快速頁模式動(dòng)態(tài)RAM(刷新 2K）) |
| IS41LV44052 | 4M x 4 DRAM With Fast Page Mode(3.3V,4M x 4 帶快速頁模式動(dòng)態(tài)RAM(刷新 2K）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41C44002-50J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41C44002-50T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41C44002-50TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41C44002-60J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。