參數(shù)資料
型號: IS41LV16100-60K
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 1M X 16 EDO DRAM, 60 ns, PDSO42
封裝: 0.400 INCH, PLASTIC, MS-027, SOJ-42
文件頁數(shù): 3/20頁
文件大?。?/td> 123K
代理商: IS41LV16100-60K
IS41C16100
IS41LV16100
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. I
04/16/03
3
ISSI
TRUTH TABLE
Function
RAS
LCAS
UCAS
WE
OE
Address t
R
/t
C
I/O
Standby
Read: Word
Read: Lower Byte
H
L
L
H
L
L
H
L
H
X
H
H
X
L
L
X
High-Z
D
OUT
Lower Byte, D
OUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
OUT
D
IN
Lower Byte, D
IN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
ROW/COL
ROW/COL
Read: Upper Byte
L
H
L
H
L
ROW/COL
Write: Word (Early Write)
Write: Lower Byte (Early Write)
L
L
L
L
L
H
L
L
X
X
ROW/COL
ROW/COL
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Read-Write
(1,2)
EDO Page-Mode Read
(2)
L
L
L
L
L
L
L
L
L
L
H
L
H
H
H
L
L
H
L
H
L
H
L
X
X
L
H
L
L
L
X
X
L
H
L
H
L
X
X
X
ROW/COL
ROW/COL
NA/COL
NA/NA
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
1st Cycle:
2nd Cycle:
Any Cycle:
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read
(2)
Write
(1,3)
H
L
H
L
L
H
H
L
H
L
H
L
H
L
L
L
H
L
H
L
H
L
L
H
H
L
H
L
H
L
H
L
L
L
H
L
EDO Page-Mode Write
(1)
EDO Page-Mode
(1,2)
Read-Write
Hidden Refresh
L
H
L
L
H
L
L
H
L
RAS
-Only Refresh
CBR Refresh
(4)
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. EARLY WRITE only.
4. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相關(guān)PDF資料
PDF描述
IS41LV16100-60KI 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100-60T 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100-60TI CABLE ASSEMBLY; SMA MALE TO SMA MALE; 93 OHM, RG62A/U COAX; 36" CABLE LENGTH
IS41LV16100-60TL CABLE ASSEMBLY; SMA MALE TO SMA MALE; 93 OHM, RG62A/U COAX; 48" CABLE LENGTH
IS41LV16100-60TLI 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41LV16100-60KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100-60T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100-60TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100-60TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100-60TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE