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| 型號(hào)： | IS41LV4100-60J |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 1M X 4 EDO DRAM, 60 ns, PDSO20 |
| 封裝： | 0.300 INCH, SOJ-20 |
| 文件頁(yè)數(shù)： | 8/19頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | IS41LV4100-60J |
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IS41C4100
IS41LV4100
ISSI
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
09/10/01
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-35
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
WP
Write Command Pulse Width
(17)
5
—
10
—
ns
t
WPZ
WE
Pulse Widths to Disable Outputs
10
—
10
—
ns
t
RWL
Write Command to
RAS
Lead Time
(17)
8
—
15
—
ns
t
CWL
Write Command to
CAS
Lead Time
(17, 21)
8
—
15
—
ns
t
WCS
Write Command Setup Time
(14, 17, 20)
0
—
0
—
ns
t
DHR
Data-in Hold Time (referenced to
RAS
)
Precharge during WRITE Cycle
30
—
40
—
ns
t
OEH
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
8
—
15
—
ns
t
DS
Data-In Setup Time
(15, 22)
0
—
0
—
ns
t
DH
Data-In Hold Time
(15, 22)
6
—
10
—
ns
t
RWC
READ-MODIFY-WRITE Cycle Time
80
—
140
—
ns
t
RWD
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
45
—
80
—
ns
t
CWD
CAS
to
WE
Delay Time
(14, 20)
25
—
36
—
ns
t
AWD
Column-Address to
WE
Delay Time
(14)
30
—
49
—
ns
t
PC
EDO Page Mode READ or WRITE
Cycle Time
(24)
12
—
25
—
ns
t
RASP
RAS
Pulse Width in EDO Page Mode
35
100K
60
100K
ns
t
CPA
Access Time from
CAS
Precharge
(15)
—
21
—
34
ns
t
PRWC
EDO Page Mode READ-WRITE
Cycle Time
(24)
40
—
56
—
ns
t
COH
/t
DOH
Data Output Hold after
CAS
LOW
5
—
5
—
ns
t
OFF
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
3
15
3
15
ns
t
WHZ
Output Disable Delay from
WE
3
15
3
15
ns
t
CLCH
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
10
—
10
—
ns
t
CSR
CAS
Setup Time (CBR REFRESH)
(30, 20)
8
—
10
—
ns
t
CHR
CAS
Hold Time (CBR REFRESH)
(30, 21)
8
—
10
—
ns
t
ORD
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
0
—
0
—
ns
t
REF
Refresh Period (1024 Cycles)
—
16
—
16
ms
t
T
Transition Time (Rise or Fall)
(2, 3)
1
50
1
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV4100-60JI | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM(刷新 2K）) |
| IS41C44004 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM(刷新 4K）) |
| IS41LV44002 | 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM(刷新 2K）) |
| IS41LV44004 | 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM(刷新 4K）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV4100-60JI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002-50J | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50JI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002-50T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 EDO Page Mode DRAM |
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