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參數(shù)資料
| 型號： | IS41LV82052 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 2M x 8 DRAM With Fast Page Mode(3.3V,2M x 8 帶快速頁模式動態(tài)RAM(刷新 2K）) |
| 中文描述： | 200萬× 8的DRAM與快速頁面模式（3.3伏，200萬× 8帶快速頁模式動態(tài)隨機存儲器（刷新2k）的） |
| 文件頁數(shù)： | 6/17頁 |
| 文件大小： | 170K |
| 代理商： | IS41LV82052 |
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS41C82052
IS41LV82052
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
RC
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
84
—
104
—
ns
t
RAC
—
50
—
60
ns
t
CAC
—
13
—
15
ns
t
AA
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(23)
CAS
Precharge Time
(9)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
—
25
—
30
ns
t
RAS
50
10K
60
10K
ns
t
RP
30
—
40
—
ns
t
CAS
8
10K
10
10K
ns
t
CP
9
—
9
—
ns
t
CSH
38
—
40
—
ns
t
RCD
12
37
14
45
ns
t
ASR
Row-Address Setup Time
0
—
0
—
ns
t
RAH
Row-Address Hold Time
8
—
10
—
ns
t
ASC
Column-Address Setup Time
(20)
0
—
0
—
ns
t
CAH
Column-Address Hold Time
(20)
8
—
10
—
ns
t
AR
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
RAS
Hold Time from
CAS
Precharge
CAS
to Output in Low-Z
(15, 24)
CAS
to
RAS
Precharge Time
(21)
30
—
40
—
ns
t
RAD
10
25
12
30
ns
t
RAL
25
—
30
—
ns
t
RPC
5
—
5
—
ns
t
RSH
8
—
10
—
ns
t
RHCP
30
—
35
—
ns
t
CLZ
0
—
0
—
ns
t
CRP
5
—
5
—
ns
t
OD
Output Disable Time
(19, 24)
3
15
3
15
ns
t
OE
Output Enable Time
(15, 16)
—
12
—
15
ns
t
OED
Output Enable Data Delay (Write)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
12
—
15
—
ns
t
OEHC
5
—
5
—
ns
t
OEP
10
—
10
—
ns
t
OES
5
—
5
—
ns
t
RCS
Read Command Setup Time
(17, 20)
0
—
0
—
ns
t
RRH
Read Command Hold Time
(referenced to
RAS
)
(12)
0
—
0
—
ns
t
RCH
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
0
—
0
—
ns
t
WCH
Write Command Hold Time
(17)
8
—
10
—
ns
t
WCR
Write Command Hold Time
(referenced to
RAS
)
(17)
40
—
50
—
ns
t
WP
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
8
—
10
—
ns
t
WPZ
7
—
7
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100A-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-50TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-50TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-50TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV82052-50J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| IS41LV82052-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| IS41LV82052-50T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| IS41LV82052-50TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| IS41LV82052-60J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
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