參數(shù)資料
型號： IS42S32200B-7TLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 2M X 32 SYNCHRONOUS DRAM, 6.5 ns, PDSO86
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86
文件頁數(shù)： 28/56頁
文件大?。?/td> 537K
代理商： IS42S32200B-7TLI
IS42S32200B
ISSI
28
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00C
09/29/03
DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
NOP
WRITE
NOP
NOP
COL n
D
IN
n
D
IN
n+1
D
IN
n+2
INTERNAL
CLOCK
DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
BANK a,
COL n
D
IN
n
D
IN
n+1
D
IN
n+2
D
IN
n+3
INTERNAL
CLOCK
CLOCK SUSPEND
Clock suspend mode occurs when a column access/burst
is in progress and CKE is registered LOW. In the clock
suspend mode, the internal clock is deactivated, “freezing”
the synchronous logic.
For each positive clock edge on which CKE is sampled
LOW, the next internal positive clock edge is suspended.
Any command or data present on the input pins at the time
of a suspended internal clock edge is ignored; any data
present on the DQ pins remains driven; and burst counters
are not incremented, as long as the clock is suspended.
(See following examples.)
Clock suspend mode is exited by registering CKE HIGH;
the internal clock and related operation will resume on the
subsequent positive clock edge.
Clock Suspend During WRITE Burst
Clock Suspend During WRITE Burst
Burst Length 4 or greater DQM is low.
CAS Latency=2. Burst Length =4 or greater. DQM is low.
相關(guān)PDF資料
PDF描述
IS42S32200C1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-55T 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-55TL 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-6BL 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-6T 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32200B-7T-TR 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II T/R
IS42S32200C1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-55T 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-55TL 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-55TL-TR 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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