- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353715 > IS42S81600A-7TL (INTEGRATED SILICON SOLUTION INC) 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS42S81600A-7TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 22/65頁 |
| 文件大?。?/td> | 556K |
| 代理商： | IS42S81600A-7TL |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁當(dāng)前第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
29
ADVANCEDINFORMATION
Rev. 00A
06/01/02
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
REGISTER DEFINITION
Mode Register
The mode register is used to define the specific mode of
operation of the SDRAM. This definition includes the
selection of a burst length, a burst type, a CAS\ latency, an
operating mode and a write burst mode, as shown in MODE
REGISTER DEFINITION.
The mode register is programmed via the LOAD MODE
REGISTER command and will retain the stored information
until it is programmed again or the device loses power.
Mode register bits M0-M2 specify the burst length, M3
specifies the type of burst (sequential or interleaved), M4- M6
specify the CAS latency, M7 and M8 specify the operating
mode, M9 specifies the WRITE burst mode, and M10 and
M11 are reserved for future use.
The mode register must be loaded when all banks are idle,
and the controller must wait the specified time before
initiating the subsequent operation. Violating either of these
requirements will result in unspecified operation.
MODE REGISTER DEFINITION
Latency Mode
M6 M5 M4
CAS Latency
0
Reserved
0
1
Reserved
0
1
0
2
0
1
3
1
0
Reserved
1
0
1
Reserved
1
0
Reserved
1
Reserved
1. To ensure compatibility with future devices,
should program M11, M10 = "0, 0"
Write Burst Mode
M9
Mode
0
Programmed Burst Length
1
Single Location Access
Operating Mode
M8 M7
M6-M0
Mode
0
Defined
Standard Operation
— —
—
All Other States Reserved
Burst Type
M3
Type
0
Sequential
1
Interleaved
Burst Length
M2
M1
M0
M3=0
M3=1
0
1
0
1
2
0
1
0
4
0
1
8
1
0
Reserved
1
0
1
Reserved
1
0
Reserved
1
Full Page
Reserved
Address Bus
Mode Register (Mx)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
(1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S81600A-7TLI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IDT71V433 | 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs |
| IDT71V65602 | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs |
| IDT71V65602S-100BG | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs |
| IDT71V65602S-100BGI | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S81600A-7TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600AL-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S81600B-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-7T | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。