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參數資料
| 型號： | IS42VS16400C1-12TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO54 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數： | 17/56頁 |
| 文件大小： | 509K |
| 代理商： | IS42VS16400C1-12TLI |
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IS42VS16400C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
10/06/05
17
REGISTER DEFINITION
Mode Register
The mode register is used to define the specific mode of
operation of the SDRAM. This definition includes the
selection of a burst length, a burst type, a CAS latency, an
operating mode and a write burst mode, as shown in MODE
REGISTER DEFINITION.
The mode register is programmed via the LOAD MODE
REGISTER command and will retain the stored information
until it is programmed again or the device loses power.
Mode register bits M0-M2 specify the burst length, M3
specifies the type of burst
(sequential or interleaved)
, M4- M6
specify the CAS latency, M7 and M8 specify the operating
mode, M9 specifies the WRITE burst mode, and M10 and
M11 are reserved for future use.
The mode register must be loaded when all banks are idle,
and the controller must wait the specified time before
initiating the subsequent operation. Violating either of
these requirements will result in unspecified operation.
MODE REGISTER DEFINITION
Latency Mode
M6 M5 M4
0
0
0
0
1
1
1
1
CAS Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1. To ensure compatibility with future devices,
should program M11, M10 = "0, 0"
Write Burst Mode
M9
Mode
Programmed Burst Length
Single Location Access
0
1
Operating Mode
M8 M7
0
— —
M6-M0
Defined
—
Mode
Standard Operation
All Other States Reserved
0
Burst Type
M3
Type
0
1
Sequential
Interleaved
Burst Length
M2 M1 M0
0
0
0
0
1
1
1
1
M3=0
1
2
4
8
Reserved
Reserved
Reserved
Full Page
M3=1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved
Address Bus
Mode Register (Mx)
A11 A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
(1)
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| IS43R16160A-6T | 16Meg x 16 256-MBIT DDR SDRAM |
| IS43R16160A | 16Meg x 16 256-MBIT DDR SDRAM |
| IS43R16320A | 32Meg x 16 512-MBIT DDR SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS42VS16400E-10TL | 功能描述:動態(tài)隨機存取存儲器 64M (4Mx16) 100MHz Commercial Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42VS16400E-10TLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42VS16400E-10TL-TR | 功能描述:動態(tài)隨機存取存儲器 64M (4Mx16) 100MHz Commercial Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42VS16400E-75BLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42VS16400E-75BLI-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
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