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| 型號： | IS42VS16400C1 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4銀行（64兆位）同步動態(tài)RAM |
| 文件頁數(shù)： | 13/56頁 |
| 文件大小： | 509K |
| 代理商： | IS42VS16400C1 |
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IS42VS16400C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
10/06/05
13
DC ELECTRICAL CHARACTERISTICS
(4)
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
I
CC1
Operating Current
(1,2)
Test Condition
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
Min.
—
Max.
35
Unit
mA
CAS
Latency = 3
CAS
Latency = 2
—
40
I
CC2P
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Inputs are stable
Operating Current
(In Burst Mode)
(1,3)
t
CK
= 10 ns
—
0.3
mA
I
CC2PS
CKE
≤
V
IL
(
MAX
)
CLK
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
CS
≥
V
IH
(
MIN
),
CKE
≥
V
IH
(
MIN
)
Inputs are stable
CKE
≤
V
IL
(
MAX
)
t
CK
=
∞
—
0.3
mA
I
CC2N
t
CK
= 10 ns
—
7
mA
I
CC2NS
t
CK
=
∞
—
2
mA
I
CC3P
t
CK
= 10 ns
—
6
mA
I
CC3PS
CKE
≤
V
IL
(
MAX
)
CLK
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
CS
≥
V
IH
(
MIN
)
CKE
≥
V
IH
(
MIN
)
CLK
≤
V
IL
(
MAX
)
t
CK
=
∞
—
5
mA
I
CC3N
t
CK
= 10 ns
—
12
mA
I
CC3NS
t
CK
=
∞
—
10
mA
I
CC4
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
Page Burst
All Banks activated
t
RC
= t
RC
(
MIN
)
CKE
≤
0.2V
CAS
latency = 2, 3
—
50
mA
I
CC5
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between V
DD
and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
3. Inputs changed once every two clocks.
4. Not all parameters are tested at the wafer level, but the parameters have been characterized previously.
Auto-Refresh Current
Self-Refresh Current
CAS
latency = 2, 3
—
—
40
170
mA
μA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42VS16400C1-10T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42VS16400C1-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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