參數(shù)資料
型號(hào)： IS43R16160A-5TL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 16 256-MBIT DDR SDRAM
中文描述： 16M X 16 DDR DRAM, 0.65 ns, PDSO66
封裝： LEAD FREE, PLASTIC, TSOP2-66
文件頁(yè)數(shù)： 11/56頁(yè)
文件大?。?/td> 792K
代理商： IS43R16160A-5TL
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
11
ISSI
IS43R16160A
Auto Precharge Operation
The Auto Precharge operation can be issued by having column address A
10
high when a Read or Write
command is issued. If A
10
is low when a Read or Write command is issued, then normal Read or Write burst
operation is executed and the bank remains active at the completion of the burst sequence. When the Auto
Precharge command is activated, the active bank automatically begins to precharge at the earliest possible
moment during the Read or Write cycle once t
RAS
(min) is satisfied.
Read with Auto Precharge
If a Read with Auto Precharge command is initiated, the DDR SDRAM will enter the precharge operation
N-clock cycles measured from the last data of the burst read cycle where N is equal to the CAS latency pro-
grammed into the device. Once the autoprecharge operation has begun, the bank cannot be reactivated until
the minimum precharge time (t
RP
) has been satisfied.
Read with Autoprecharge Timing
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
D
0
D
1
D
2
D
3
Begin Autoprecharge
BA
ACT
R/w AP
NOP
NOP
NOP
NOP
NOP
NOP
CK, CK
Command
DQS
DQ
t
RAS
(min)
t
RP
(min)
Earliest Bank A reactivate
T9
相關(guān)PDF資料
PDF描述
IS43R16160A-6T 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM
IS43R16320A-6TL 32Meg x 16 512-MBIT DDR SDRAM
IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16160A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 16 256-MBIT DDR SDRAM
IS43R16160B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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