參數(shù)資料
型號: IS43R16160A-5TL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 16Meg x 16 256-MBIT DDR SDRAM
中文描述: 16M X 16 DDR DRAM, 0.65 ns, PDSO66
封裝: LEAD FREE, PLASTIC, TSOP2-66
文件頁數(shù): 49/56頁
文件大?。?/td> 792K
代理商: IS43R16160A-5TL
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
49
ISSI
IS43R16160A
Figure 42 - READ - WITHOUT AUTO PRECHARGE
CK
/CK
COMMAND
NOP
NOP
PRE
READ
CKE
Col
n
RA
RA
A10
BA0, BA1
Bank
x
*Bank
x
DON'T CARE
DO
n
= Data Out from column
n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO
n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
DQ
DM
DQS
Case 1:
tAC/tDQSCK = min
Case 2:
tAC/tDQSCK = max
DQ
DQS
NOP
NOP
ACT
NOP
NOP
NOP
VALID
VALID
VALID
DIS AP
ONE BANK
ALL BANKS
tCK
tCH
tCL
tIS
tIS
tIH
tIH
tIS
tIS
tIH
tIH
tIH
tIS
tIH
tRPRE
tRPRE
tRP
t
t
RA
CL = 2
t
HZ
t
HZ
t
LZ
t
LZ
t
LZ
t
AC
t
DQSCK
t
min
t
AC
Bank
x
A0-A7
A8, A9, A11
DO
n
DO
n
DQSCK
RPST
RPST
t
LZ
Start
!
Autoprecharge
相關(guān)PDF資料
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IS43R16160A-6T 16Meg x 16 256-MBIT DDR SDRAM
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