參數(shù)資料
型號: IS45LV44002B-50JLA1
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, LEAD FREE, PLASTIC, SOJ-24
文件頁數(shù): 4/20頁
文件大?。?/td> 137K
代理商: IS45LV44002B-50JLA1
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
09/12/05
IS45LV44002B
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
–0.5 to +4.6
V
V
DD
Supply Voltage
–0.5 to +4.6
V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Operating Temperature
-40 to +85
°C
T
STG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
3.0
3.3
3.6
V
V
IH
Input High Voltage
2.0
V
DD
+ 0.3
V
V
IL
Input Low Voltage
–0.3
0.8
V
T
A
Automotive Ambient Temperature (A1)
-40
+85
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A10
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
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