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參數(shù)資料
| 型號： | IS45S16100C1-7TA1 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50 |
| 文件頁數(shù)： | 27/81頁 |
| 文件大?。?/td> | 821K |
| 代理商： | IS45S16100C1-7TA1 |
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IS45S16100C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/03/06
27
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in the
precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
DAL
) between the
last burst data input and the completion of the precharge
operation differs depending on the
CAS
latency setting.
The delay (t
DAL
) is t
RP
plus one CLK period. That is, the
precharge operation starts one clock period after the last
burst data input.
Therefore, the selected bank can be made active after a
delay of t
DAL
.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
CAS
Latency
t
DAL
3
2
1CLK
+t
RP
1CLK
+t
RP
t
RP
t
DAL
PRECHARGE START
DQ
WRITE A0
COMMAND
CLK
ACT 0
WRITE WITH AUTO-PRECHARGE
(BANK 0)
t
RP
t
DAL
PRECHARGE START
WRITE A0
COMMAND
DQ
CLK
D
IN
0
D
IN
1
D
IN
2
D
IN
3
ACT 0
WRITE WITH AUTO-PRECHARGE
(BANK 0)
D
IN
0
D
IN
1
D
IN
2
D
IN
3
CAS
latency = 2, burstlength = 4
CAS
latency = 3, burstlength = 4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS45S16100C1-7TLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TLA1 | 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100C1-7TLA1-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
| IS45S16100E-6TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
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