參數(shù)資料
型號: IS45S16100C1-7TA1
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 80/81頁
文件大小: 821K
代理商: IS45S16100C1-7TA1
PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
02/16/06
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Mini Ball Grid Array
Package Code: B (60-Ball)
mBGA - 10.1mm x 6.4mm
MILLIMETERS
INCHES
Sym. Min.
Typ. Max.
Min.
Typ.
Max.
No.
Leads
60
A
A1
D
D1
E
E1
0.28
10.10 10.20
9.10
6.40
3.90
1.20
0.33
0.047
0.013
0.402
0.256
0.23
10.00
6.30
0.009 0.011
0.394 0.398
0.248 0.252
6.50
0.358
0.154
e
0.65
0.026
7 6 5 4 3 2 1
1 2 3 4 5 6 7
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
0.40 +
+/-
0.05 (60X)
D
e
e
A1
SEATING PLANE
A
D1
E1
E
Notes:
1. Controlling dimensions are in millimeters.
2. 0.65 mm Ball Pitch
相關(guān)PDF資料
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IS45S16100C1-7TLA 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
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