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參數資料
| 型號： | IS45S16800B-7TLA |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數： | 11/59頁 |
| 文件大小： | 593K |
| 代理商： | IS45S16800B-7TLA |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/14/06
11
ISSI
IS45S81600B, IS45S16800B
Current State
Write Recovering
CS
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
RAS
×
H
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
×
H
H
H
L
L
L
L
×
H
H
H
L
CAS
×
H
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
×
H
L
L
H
H
L
L
×
H
H
L
×
WE
×
H
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
×
H
L
H
L
H
L
×
H
L
×
×
Address
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, RA
Command
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP/BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/WRITE
ACT/PRE/PALL
REF/MRS
Action
Nop, Enter row active after tDPL
Nop, Enter row active after tDPL
Nop, Enter row active after tDPL
Begin read
(8)
Begin new write
ILLEGAL
(3)
ILLEGAL
(3)
ILLEGAL
ILLEGAL
Nop, Enter precharge after tDPL
Nop, Enter precharge after tDPL
Nop, Enter row active after tDPL
ILLEGAL
(3,8,11)
ILLEGAL
(3,11)
ILLEGAL
(3,11)
ILLEGAL
(3,11)
ILLEGAL
ILLEGAL
Nop, Enter idle after tRC
Nop, Enter idle after tRC
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Nop, Enter idle after 2 clocks
Nop, Enter idle after 2 clocks
ILLEGAL
ILLEGAL
ILLEGAL
Write Recovering
with Auto
Precharge
Refresh
Mode Register
Accessing
FUNCTIONAL TRUTH TABLE Continued:
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
Notes:
1. All entries assume that CKE is active (CKEn-1=CKEn=H).
2. If both banks are idle, and CKE is inactive (Low), the device will enter Power Down mode. All input buffers except CKE will
be disabled.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the
state of that bank.
4. If both banks are idle, and CKE is inactive (Low), the device will enter Self-Refresh mode. All input buffers except CKE will
be disabled.
5. Illegal if tRCD is not satisfied.
6. Illegal if tRAS is not satisfied.
7. Must satisfy burst interrupt condition.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Must mask preceding data which don’t satisfy tDPL.
10. Illegal if tRRD is not satisfied.
11. Illegal for single bank, but legal for other banks.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS45S16800B-7TLA1 | 功能描述:動態(tài)隨機存取存儲器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16800B-7TLA1-TR | 功能描述:動態(tài)隨機存取存儲器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16800E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM |
| IS45S16800E-6BLA1 | 功能描述:動態(tài)隨機存取存儲器 128M (8Mx16) 166MHz S動態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16800E-6BLA1-TR | 功能描述:動態(tài)隨機存取存儲器 128M (8Mx16) 166MHz S動態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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