• <nobr id="ukerp"><menu id="ukerp"></menu></nobr>
    <pre id="ukerp"></pre>
  • <thead id="ukerp"><noframes id="ukerp"></noframes></thead>
    <pre id="ukerp"><strike id="ukerp"><label id="ukerp"></label></strike></pre>
    <nobr id="ukerp"><fieldset id="ukerp"></fieldset></nobr>
  • 參數(shù)資料
    型號(hào): IS45S32200C1-7BLA1
    廠商: INTEGRATED SILICON SOLUTION INC
    元件分類: DRAM
    英文描述: 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    中文描述: 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
    封裝: 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90
    文件頁數(shù): 54/59頁
    文件大?。?/td> 622K
    代理商: IS45S32200C1-7BLA1
    IS45S32200C1
    ISSI
    54
    Integrated Silicon Solution, Inc. — www.issi.com —
    1-800-379-4774
    Rev. B
    05/18/06
    ALTERNATING BANK WRITE ACCESS
    BANK 0
    BANK 1
    BANK 1
    BANK 0
    DON'T CARE
    CLK
    CKE
    COMMAND
    DQM0-DQM3
    A0-A9
    A10
    BA0, BA1
    DQ
    t
    CMS
    t
    CMH
    t
    AS
    t
    AH
    t
    AS
    t
    AH
    t
    AS
    t
    AH
    t
    DS
    t
    DH
    t
    DS
    t
    DH
    t
    DS
    t
    DH
    t
    RCD
    - BANK 0
    t
    RRD
    t
    RCD
    - BANK 0
    t
    WR
    - BANK 1
    t
    RAS
    - BANK 0
    t
    RC
    - BANK 0
    t
    CH
    t
    CL
    t
    CK
    t
    DS
    t
    DH
    t
    DS
    t
    DH
    t
    DS
    t
    DH
    t
    DS
    t
    DH
    t
    DS
    t
    DH
    t
    CMS
    t
    CMH
    t
    CKS
    t
    CKH
    ACTIVE
    NOP
    WRITE
    NOP
    ACTIVE
    NOP
    WRITE
    NOP
    NOP
    ACTIVE
    D
    IN
    m
    D
    IN
    m+
    1
    D
    IN
    m+
    2
    D
    IN
    m+
    3
    D
    IN
    b
    D
    IN
    b+
    1
    t
    RP
    - BANK 0
    D
    IN
    b+
    2
    D
    IN
    b+
    3
    ROW
    ROW
    BANK 0
    ROW
    ROW
    t
    RCD
    - BANK 1
    t
    WR
    - BANK 0
    COLUMN m
    ROW
    COLUMN b
    ROW
    ENABLE AUTO PRECHARGE
    ENABLE AUTO PRECHARGE
    T0
    T1
    T2
    T3
    T4
    T5
    T6
    T7
    T8
    T9
    相關(guān)PDF資料
    PDF描述
    IS45S32200C1-7TA1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    IS45S32200C1-7TLA 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    IS45S32200C1-7TLA1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    IS45S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
    IS45S32400B-6BA1 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    IS45S32200C1-7TA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    IS45S32200C1-7TLA 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    IS45S32200C1-7TLA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    IS45S32200E 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    IS45S32200E-6BLA1 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (2Mx32) 166MHz S動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube