參數(shù)資料
型號(hào)： IS61LF25636A-7.5B3
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述： 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝： 13 X 15 MM, PLASTIC, BGA-165
文件頁(yè)數(shù)： 12/32頁(yè)
文件大?。?/td> 215K
代理商： IS61LF25636A-7.5B3
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/05
ISSI
IS61LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
6.5
MAX
x18
7.5
MAX
Symbol
Parameter
Test Conditions
Temp. range
x36
x18
x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
≤
V
IL
,
All Inputs
≤
0.2V or
≥
V
DD
– 0.2V,
Cycle Time
≥
t
KC
min.
Com.
Ind.
185
190
185
190
175
185
175
185
mA
I
SB
Standby Current
TTL Input
Device Deselected,
V
DD
= Max.,
All Inputs
≤
V
IL
or
≥
V
IH
,
ZZ
≤
V
IL
, f = Max.
Com.
Ind.
140
150
140
150
140
150
140
150
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
DD
= Max.,
V
IN
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V
f = 0
Com.
Ind.
80
85
80
85
80
85
80
85
mA
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
45
50
45
50
45
50
45
50
mA
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100 μA maximum leakage current when tied to
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= –4.0 mA (3.3V)
I
OH
= –1.0 mA
2.4
—
2.0
—
V
(2.5V)
V
OL
Output LOW Voltage
I
OL
= 8.0 mA (3.3V)
I
OL
= 1.0 mA (2.5V)
—
0.4
—
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
1.7
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
–0.3
0.8
–0.3
0.7
V
I
LI
Input Leakage Current
V
SS
≤
V
IN
≤
V
DD
(1)
V
SS
≤
V
OUT
≤
V
DDQ
,
OE
= V
IH
–5
5
–5
5
μA
I
LO
Output Leakage Current
–5
5
–5
5
μA
OPERATING RANGE (IS61LFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
V
DD
V
DDQ
3.3V ± 5%
3.3V ± 5%
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
OPERATING RANGE (IS61VFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
V
DD
V
DDQ
2.5V ± 5%
2.5V ± 5%
2.5V ± 5%
2.5V ± 5%
相關(guān)PDF資料
PDF描述
IS61LF25636A-7.5B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25636A-7.5TQ 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25636A-7.5TQI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25636A-7.5TQLI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LF25636T-7.5TQ 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 7.5ns 100-Pin TQFP
IS61LF25672A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25672A-6.5B1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25672A-6.5B1I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF409618B-6.5B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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