參數(shù)資料
型號(hào): IS61LF25636A-7.5TQ
廠商: INTEGRATED SILICON SOLUTION INC
元件分類(lèi): DRAM
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述: 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 13/32頁(yè)
文件大小: 215K
代理商: IS61LF25636A-7.5TQ
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/05
13
ISSI
IS61LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
3.3V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 2
317
5 pF
Including
jig and
scope
351
OUTPUT
3.3V
Figure 1
OUTPUT
Z
O
= 50
1.5V
50
相關(guān)PDF資料
PDF描述
IS61LF25636A-7.5TQI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25636A-7.5TQLI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51218A-6.5B2 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51218A-6.5B2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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IS61LF25636T-7.5TQ 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 7.5ns 100-Pin TQFP
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