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參數(shù)資料
| 型號： | IS61LF25636A-7.5TQLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 256K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | LEAD FREE, TQFP-100 |
| 文件頁數(shù)： | 11/32頁 |
| 文件大?。?/td> | 215K |
| 代理商： | IS61LF25636A-7.5TQLI |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/05
11
ISSI
IS61LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
INTERLEAVED BURST ADDRESS TABLE (MODE = V
DD
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
STG
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to Vss for I/O Pins
V
IN
Voltage Relative to Vss for
for Address and Control Inputs
V
DD
Voltage on V
DD
Supply Relative to Vss
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Value
–55 to +150
1.6
100
–0.5 to V
DDQ
+ 0.5
–0.5 to V
DD
+ 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LF51218A | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51218A-6.5B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LF25636T-7.5TQ | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 7.5ns 100-Pin TQFP |
| IS61LF25672A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF25672A-6.5B1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF25672A-6.5B1I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF409618B-6.5B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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