參數(shù)資料
型號(hào): IS61LPS12836A-200TQLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述: 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
封裝: LEAD FREE, TQFP-100
文件頁(yè)數(shù): 13/26頁(yè)
文件大?。?/td> 174K
代理商: IS61LPS12836A-200TQLI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
10/07/04
13
ISSI
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-250
MAX
-200
MAX
Symbol
Parameter
Test Conditions
Temp. range
x18
x32/x36
x18
x32/x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
V
IL
,
All Inputs
0.2V or
V
DD
– 0.2V,
Cycle Time
t
KC
min.
Device Deselected,
V
DD
= Max.,
All Inputs
V
IL
or
V
IH
,
ZZ
V
IL
, f = Max.
Com.
Ind.
Auto.
225
250
275
225
250
275
200
210
225
200
210
225
mA
I
SB
Standby Current
TTL Input
Com.
Ind.
Auto.
90
100
120
90
100
120
90
100
120
90
100
120
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
DD
= Max.,
V
IN
V
SS
+ 0.2V or
V
DD
– 0.2V
f = 0
Com.
Ind.
Auto.
typ.
(2)
70
75
90
70
75
90
70
75
90
70
75
90
mA
40
40
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
Auto.
typ.
(2)
30
35
45
30
35
45
30
35
45
30
35
45
mA
25
25
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100μA maximum leakage current when tied to
V
SS
+ 0.2V or
V
DD
– 0.2V.
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.
相關(guān)PDF資料
PDF描述
IS61LPS12836A-250B2 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B2I 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B3 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B3I 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQ 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPS12836A-200TQLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 128Kx36 200Mhz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS12836A-250B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B3I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM