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參數(shù)資料
| 型號： | IS61LPS12836A-250B3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 128K X 36 CACHE SRAM, 2.6 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 |
| 文件頁數(shù)： | 1/26頁 |
| 文件大?。?/td> | 174K |
| 代理商： | IS61LPS12836A-250B3 |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
10/07/04
1
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth
expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
Power Supply
LPS: V
DD
3.3V + 5%, V
DDQ
3.3V/2.5V + 5%
VPS: V
DD
2.5V + 5%, V
DDQ
2.5V + 5%
JEDEC 100-Pin TQFP, 119-ball PBGA, and
165-ball PBGA packages
Automotive temperature available
Lead Free available
DESCRIPTION
The
ISSI
IS61(64)LPS12832A, IS61(64)LPS/VPS12836A
and IS61(64)LPS/VPS25618A are high-speed, low-power
synchronous static
RAMs
designed to provide burstable,
high-performance
memory for communication and network-
ing applications. The IS61(64)LPS12832A is organized as
131,072 words by 32 bits. The IS61(64)LPS/VPS12836A
is organized as 131,072 words by 36 bits. The IS61(64)LPS/
VPS25618A is organized as 262,144 words by 18 bits.
Fabricated with
ISSI
's advanced CMOS technology, the
device integrates a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single mono-
lithic circuit. All synchronous inputs pass through regis-
ters controlled by a positive-edge-triggered single clock
input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (
BWE
) input combined with one or more
individual byte write signals (
BWx
). In addition, Global
Write (
GW
) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
128K x 32, 128K x 36, 256K x 18
4 Mb SYNCHRONOUS PIPELINED,
SINGLE CYCLE DESELECT STATIC RAM
PRELIMINARY INFORMATION
FEBRUARY 2005
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
250
2.6
4
250
200
3.1
5
200
Units
ns
ns
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LPS12836A-250B3I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-250TQ | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-250TQI | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS25618A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS25618A-200B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LPS12836A-250B3I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-250TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-250TQI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-250TQL | 功能描述:靜態(tài)隨機(jī)存取存儲器 4M (128Kx36) 200MHz Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS12836A-250TQL-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 4M (128Kx36) 200MHz Sync 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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