參數(shù)資料
型號(hào)： IS61LPS12836A-250B2I
廠(chǎng)商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述： 128K X 36 CACHE SRAM, 2.6 ns, PBGA119
封裝： 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
文件頁(yè)數(shù)： 11/26頁(yè)
文件大?。?/td> 174K
代理商： IS61LPS12836A-250B2I
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
10/07/04
11
ISSI
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
INTERLEAVED BURST ADDRESS TABLE (MODE = V
DD
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
STG
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to Vss for I/O Pins
V
IN
Voltage Relative to Vss for
for Address and Control Inputs
V
DD
Voltage on V
DD
Supply Relative to Vss
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Value
–55 to +150
1.6
100
–0.5 to V
DDQ
+ 0.5
–0.5 to V
DD
+ 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or
electric fields; however, precautions may be taken to avoid application of any voltage higher than
maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
相關(guān)PDF資料
PDF描述
IS61LPS12836A-250B3 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B3I 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQ 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQI 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPS12836A-250B3 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250B3I 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQ 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQL 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (128Kx36) 200MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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