參數(shù)資料
型號(hào): IS61LPS12836A-250B3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類(lèi): DRAM
英文描述: 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述: 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
文件頁(yè)數(shù): 7/26頁(yè)
文件大?。?/td> 174K
代理商: IS61LPS12836A-250B3
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
10/07/04
7
ISSI
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
165 PBGA PACKAGE PIN CONFIGURATION
256K
X
18 (TOP VIEW)
PIN DESCRIPTIONS
1
NC
NC
NC
NC
NC
NC
NC
NC
DQb
DQb
DQb
DQb
DQPb
NC
MODE
2
A
A
NC
DQb
DQb
DQb
DQb
NC
NC
NC
NC
NC
NC
NC
NC
3
4
5
NC
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
6
7
8
9
10
A
A
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
NC
A
A
11
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
NC
NC
NC
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
BWb
NC
Vss
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
Vss
A
A
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
A
1
*
A
0
*
BWE
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
ADSC
OE
Vss
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
Vss
A
A
ADV
ADSP
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
Symbol
A
A0, A1
ADV
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write
Controls
ADSP
ADSC
GW
CLK
CE
,
CE2
,
CE2
BW
x (x=a,b)
Symbol
BWE
Pin Name
Byte Write Enable
OE
ZZ
MODE
NC
DQx
DQPx
V
DD
V
DDQ
Output Enable
Power Sleep Mode
Burst Sequence Selection
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Isolated Output Power Supply
3.3V/2.5V
Vss
Ground
相關(guān)PDF資料
PDF描述
IS61LPS12836A-250B3I 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQ 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQI 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25618A-200B2 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LPS12836A-250B3I 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQ 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-250TQL 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (128Kx36) 200MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPS12836A-250TQL-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (128Kx36) 200MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray