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參數(shù)資料
| 型號： | IS61LV10248-8BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 1M X 8 STANDARD SRAM, 8 ns, PBGA36 |
| 封裝： | 9 X 11 MM, MINI, BGA-36 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 123K |
| 代理商： | IS61LV10248-8BI |
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
IS61LV10248
ISSI
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR2.eps
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
> V
IH
.
AC WAVEFORMS
WRITE CYCLE NO. 2
(1,2)
(
WE
Controlled:
OE
is HIGH During Write Cycle)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV10248-8M | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8MI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8T | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8TI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV12816L-10T | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV10248-8M | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8MI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV10248-8T | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV10248-8TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV12816 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
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