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參數(shù)資料
| 型號(hào)： | IS61LV10248-8BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 1M X 8 STANDARD SRAM, 8 ns, PBGA36 |
| 封裝： | 9 X 11 MM, MINI, BGA-36 |
| 文件頁(yè)數(shù)： | 7/16頁(yè) |
| 文件大小： | 123K |
| 代理商： | IS61LV10248-8BI |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
7
IS61LV10248
ISSI
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
CE_RD2.eps
ADDRESS
OE
CE
D
OUT
t
HZCE
READ CYCLE NO. 2
(1,3)
(
CE
and
OE
Controlled)
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CE
=
OE
= V
IL
)
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV10248-8M | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8MI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8T | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8TI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV12816L-10T | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV10248-8M | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-8MI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV10248-8T | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV10248-8TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV12816 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
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