參數資料
型號: IS61LV12816L-10LQI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 128K X 16 STANDARD SRAM, 10 ns, PQFP44
封裝: MS-026, LQFP-44
文件頁數: 5/16頁
文件大?。?/td> 112K
代理商: IS61LV12816L-10LQI
IS61LV12816L, IS61LV12816LL
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/28/03
5
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
IS61LV12816L
-8 ns
Min. Max.
-10 ns
Min. Max.
Symbol
Parameter
Test Conditions
Unit
I
CC
V
DD
Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
typ.
(2)
65
70
50
60
65
50
mA
I
SB
1
TTL Standby
Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = max
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V
, f = 0
Com.
Ind.
30
35
25
30
mA
I
SB
2
CMOS Standby
Current
(CMOS Inputs)
Com.
Ind.
typ.
(2)
3
4
3
4
mA
mA
μ
A
700
700
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.3V, T
A
=25
o
C. Not 100% tested.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
IS61LV12816LL
-12 ns
Min.
Symbol
Parameter
Test Conditions
Max.
Unit
I
CC
V
DD
Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
typ.
(2)
40
45
30
25
mA
@ 15ns
(3)
I
SB
1
TTL Standby
Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = max
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V
, f = 0
Com.
Ind.
20
20
mA
I
SB
2
CMOS Standby
Current
(CMOS Inputs)
Com.
Ind.
typ.
(2)
750
900
400
μ
A
μ
A
μ
A
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.3V, T
A
=25
0
C. Not 100% tested.
3. For 15ns speed (t
AA
), Icc is measured at V
DD
=3.3V, T
A
=25
0
C. Not 100% tested.
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
相關PDF資料
PDF描述
IS61LV12816L-8B 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8LQ 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8LQI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816LL 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816LL-12BI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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IS61LV12816L-10LQI-TR 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10LQLI 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10LQLI-TR 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10T 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10TI 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray