參數(shù)資料
型號(hào): IS61LV12816L-10LQLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 128K X 16 STANDARD SRAM, 10 ns, PQFP44
封裝: LEAD FREE, MS-026, LQFP-44
文件頁(yè)數(shù): 1/16頁(yè)
文件大小: 112K
代理商: IS61LV12816L-10LQLI
IS61LV12816L
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
1
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
FEATURES
High-speed access time: 8, 10 ns
Operating Current: 50mA (typ.)
Stand by Current: 700μA (typ.)
TTL and CMOS compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS61LV12816L is a high-speed, 2,097,152-bit
static RAM organized as 131,072 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS61LV12816L is packaged in the JEDEC standard
44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
OCTOBER 2005
A0-A16
CE
OE
WE
UB
LB
128Kx16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關(guān)PDF資料
PDF描述
IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10BI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10LQ 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10LQI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8B 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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IS61LV12816L-10LQLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10T 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10TI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10TI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-10TL 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray