- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377563 > IS61LV12816L-10LQLI (INTEGRATED SILICON SOLUTION INC) 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY PDF資料下載
參數(shù)資料
| 型號： | IS61LV12816L-10LQLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 128K X 16 STANDARD SRAM, 10 ns, PQFP44 |
| 封裝： | LEAD FREE, MS-026, LQFP-44 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IS61LV12816L-10LQLI |
IS61LV12816L
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8 ns
-10 ns
Min.
Symbol
t
WC
t
SCE
t
AW
Parameter
Min.
Max
Max.
Unit
Write Cycle Time
8
—
10
—
ns
CE
to Write End
7
—
8
—
ns
Address Setup Time
to Write End
7
—
8
—
ns
t
HA
t
SA
t
PBW
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
LB
,
UB
Valid to End of Write
6.5
—
8
—
ns
WE
Pulse Width (
OE
= HIGH)
6
—
7
—
ns
WE
Pulse Width (
OE
= LOW)
6.5
—
8
—
ns
Data Setup to Write End
4
—
5
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
3
—
4
ns
WE
HIGH to Low-Z Output
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV12816L | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-10BI | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-10LQ | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-10LQI | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-8B | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12816L-10LQLI-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10T | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10TI | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10TI-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10TL | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。