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參數(shù)資料
| 型號： | IS61LV12816L-8BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 128K X 16 STANDARD SRAM, 8 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IS61LV12816L-8BI |
PACKAGING INFORMATION
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/30/03
LQFP (Low Profile Quad Flat Pack)
Package Code: LQ (44-pin)
Low Profile Quad Flat Pack (LQ)
MS-026
44
Millimeters
Min
Max
—
1.60
0.05
0.15
1.35
1.45
0.30
0.45
0.09
0.20
12.00 BSC
10.00 BSC
12.00 BSC
10.00 BSC
0.80 BSC
0.45
0.75
1.00 REF.
0
o
7
o
Ref. Std.
No. Leads
Inches
Min
—
0.002
0.053
0.012
0.004
0.472 BSC
0.394 BSC
0.472 BSC
0.394 BSC
0.031 BSC
0.018
0.039 REF.
0
o
Symbol
A
A1
A2
b
C
D
D1
E
E1
e
L
L1
θ
Max
0.063
0.006
0.057
0.018
0.008
0.030
7
o
Notes:
1. All dimensioning and tolerancing
conforms to ANSI Y14.5M-1982.
2. Dimensions D1 and E1 do not include
mold protrusions. Allowable protrusion is
0.25 mm per side. D1 and E1 include
mold mismatch.
3. Controlling dimension: millimeters.
D
D1
E
E1
A2
A1
A
e
b
SEATING
PLANE
θ
L1
L
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| IS61LV12816L-8T | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-8TI | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-8TL | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-10BLI | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12816L-8BI-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 8ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-8T | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 8ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-8TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-8TL | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns 3.3V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-8TL-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns 3.3V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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