參數(shù)資料
型號: IS61LV12816L-8TL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 128K X 16 STANDARD SRAM, 8 ns, PDSO44
封裝: LEAD FREE, PLASTIC, TSOP2-44
文件頁數(shù): 4/16頁
文件大小: 112K
代理商: IS61LV12816L-8TL
IS61LV12816L
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
ISSI
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
DD
(8 n
S
)
3.3V + 10%, -5%
3.3V + 10%, -5%
V
DD
(10 n
S
)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(1)
V
DD
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
2
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
T
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.5 to 4.0V
–0.5 to V
DD
+ 0.5
–65 to + 150
1.0
相關(guān)PDF資料
PDF描述
IS61LV12816L-10BLI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10LQLI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10BI 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10LQ 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV12816L-8TL-TR 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 10ns 3.3V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816L-8T-TR 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 8ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12816LL-12TI 制造商:Integrated Silicon Solution Inc 功能描述:
IS61LV12824 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10B 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray