參數(shù)資料
型號(hào): IS61LV12824-10BL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 128K X 24 STANDARD SRAM, 10 ns, PBGA119
封裝: LEAD FREE, PLASTIC, BGA-119
文件頁(yè)數(shù): 4/13頁(yè)
文件大?。?/td> 77K
代理商: IS61LV12824-10BL
IS61LV12824
ISSI
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
(8 ns)
3.3V + 10%, – 5%
3.3V + 10%, – 5%
V
CC
(10 ns)
3.3V ± 10%
3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.2
V
CC
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
GND
V
OUT
V
CC
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width
2.0 ns).
V
IH
(max.) = V
CC
+ 0.3V DC; V
IH
(max.) = V
CC
+ 2.0V AC (pulse width
2.0 ns).
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
STG
T
BIAS
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Value
–0.5 to 5.0
–0.5 to Vcc + 0.5
–65 to + 150
–10 to + 85
–45 to + 90
2.0
±20
Unit
V
V
°C
°C
°C
W
mA
Com.
Ind.
P
T
I
OUT
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Power Dissipation
DC Output Current
TRUTH TABLE
Mode
WE
CE1
CE2
CE2
OE
I/O0-I/O23
Vcc Current
Not Selected
X
X
X
H
H
L
H
X
X
L
L
L
X
L
X
H
H
H
X
X
H
L
L
L
X
X
X
H
L
X
High-Z
I
SB
1
, I
SB
2
Output Disabled
Read
Write
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
相關(guān)PDF資料
PDF描述
IS61LV12824-10TQ 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQI 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQLI 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-8B 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-8BI 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV12824-10BL-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3Mb 128Kx24 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12824-10B-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3Mb 128Kx24 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12824-10TQ 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3Mb 128Kx24 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12824-10TQI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3Mb 128Kx24 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV12824-10TQI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3Mb 128Kx24 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray