- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377563 > IS61LV256-15T (INTEGRATED SILICON SOLUTION INC) 32K x 8 LOW VOLTAGE CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS61LV256-15T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 15 ns, PDSO28 |
| 封裝： | 0.450 INCH, PLASTIC, TSOP1-28 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 100K |
| 代理商： | IS61LV256-15T |
ISSI
IS61LV256
2-6
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCE
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CE
WE
D
OUT
D
IN
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-12 ns
Min.
-15 ns
Min.
-20 ns
Min.
-25 ns
Min.
Symbol
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Parameter
Max.
Max.
Max.
Max.
Unit
Write Cycle Time
12
—
15
—
20
—
25
—
ns
CE
to Write End
8
—
10
—
13
—
15
—
ns
Address Setup Time to Write End
8
—
10
—
15
—
20
—
ns
Address Hold from Write End
0
—
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
0
—
ns
WE
Pulse Width
8
—
10
—
13
—
15
—
ns
Data Setup to Write End
6
—
8
—
10
—
12
—
ns
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
6
—
7
—
8
—
10
ns
WE
HIGH to Low-Z Output
0
—
0
—
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured
±
500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV256-20J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20T | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-25J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-25N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV256-15TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-15TL | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K 32Kx8 15ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256-15TL-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K 32Kx8 15ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV25616 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616_01 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。