- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377563 > IS61LV256-20J (INTEGRATED SILICON SOLUTION INC) 32K x 8 LOW VOLTAGE CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS61LV256-20J |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 100K |
| 代理商： | IS61LV256-20J |
ISSI
IS61LV256
2-4
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
AC TEST LOADS
635
30 pF
Including
jig and
scope
702
OUTPUT
3.3V
635
5 pF
Including
jig and
scope
702
OUTPUT
3.3V
Figure 1a.
Figure 1b.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
Min.
-15 ns
Min.
-20 ns
Min.
-25 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
t
HZCE
(2)
t
PU
(3)
t
PD
(3)
Parameter
Max.
Max.
Max.
Max.
Unit
Read Cycle Time
12
—
15
—
20
—
25
—
ns
Address Access Time
—
12
—
15
—
20
—
25
ns
Output Hold Time
2
—
2
—
2
—
2
—
ns
CE
Access Time
—
12
—
15
—
20
—
25
ns
OE
Access Time
—
6
—
7
—
8
—
9
ns
OE
to Low-Z Output
0
—
0
—
0
—
0
—
ns
OE
to High-Z Output
—
7
—
8
—
9
—
10
ns
CE
to Low-Z Output
3
—
3
—
3
—
3
—
ns
CE
to High-Z Output
—
5
—
6
—
9
—
10
ns
CE
to Power-Up
0
—
0
—
0
—
0
—
ns
CE
to Power-Down
—
13
—
15
—
18
—
20
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured
±
500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV256-20N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20T | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-25J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-25N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-25T | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV256-20JI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20N | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20NI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IS61LV256-20T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。