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參數(shù)資料
| 型號： | IS61LV3216L-20T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IS61LV3216L-20T |
IS61LV3216L
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ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
3
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to + 70°C
–40°C to + 85°C
V
CC
10 ns, 12 ns
3.3V +10%, –5%
3.3V +10%, –5%
V
CC
15 ns, 20 ns
3.3V ± 10%
3.3V ± 10%
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 ns
-12 ns
-15 ns
-20 ns
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
130
—
—
—
120
130
—
—
110
120
—
—
100
110
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
Com.
Ind.
—
—
10
—
—
—
10
10
—
—
10
10
—
—
10
10
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
CE
V
CC
– 0.2V,
V
IN
V
CC
– 0.2V, or
V
IN
- 0.2V, f = 0
Com.
Ind.
—
—
1
—
—
—
1
1
—
—
1
1
—
—
1
1
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND - V
IN
- V
CC
–1
1
μA
I
LO
Output Leakage
GND - V
OUT
- V
CC
, Outputs Disabled
–2
2
μA
Note:
1. V
IL
(min.) = –3.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
V
CC
Supply Voltage with Respect to GND
V
TERM
Terminal Voltage with Respect to GND
T
STG
Storage Temperature
P
T
Power Dissipation
I
OUT
DC Output Current (LOW)
Value
–0.5 to +4.6
–0.5 to Vcc + 0.5
–65 to +150
1.0
20
Unit
V
V
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV3216L-20TI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-10K | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-10T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12K | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV3216L-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV51216 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV51216-10M | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MI | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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