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參數(shù)資料
| 型號(hào)： | IS61LV3216L-20T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | IS61LV3216L-20T |
IS61LV3216L
ISSI
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
-15
-20
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
t
RC
Read Cycle Time
10
—
12
—
15
—
20
—
ns
t
AA
Address Access Time
—
10
—
12
—
15
—
20
ns
t
OHA
Output Hold Time
3
—
3
—
3
—
3
—
ns
t
ACE
CE
Access Time
—
10
—
12
—
15
—
20
ns
t
DOE
OE
Access Time
—
5
—
6
—
7
—
8
ns
t
HZOE
(2)
OE
to High-Z Output
0
5
0
6
0
7
0
8
ns
t
LZOE
(2)
OE
to Low-Z Output
0
—
0
—
0
—
0
—
ns
t
HZCE
(2
CE
to High-Z Output
0
5
0
6
0
7
0
8
ns
t
LZCE
(2)
CE
to Low-Z Output
3
—
3
—
3
—
3
—
ns
t
BA
LB
,
UB
Access Time
—
5
—
6
—
7
—
8
ns
t
HZB
LB
,
UB
to High-Z Output
0
5
0
6
0
7
0
8
ns
t
LZB
LB
,
UB
to Low-Z Output
5
—
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
AC TEST LOADS
Figure 1a.
Figure 1b.
319
30 pF
Including
jig and
scope
353
OUTPUT
3.3V
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
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| IS61LV3216L-20TI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-10K | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-10T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV3216L-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV51216 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV51216-10M | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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