參數資料
型號： IS61NF25632
廠商： Integrated Silicon Solution, Inc.
英文描述： SRAM
中文描述： 靜態(tài)存儲器
文件頁數： 8/20頁
文件大?。?/td> 155K
代理商： IS61NF25632
8
Integrated Silicon Solution, Inc.
—
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00D
04/26/01
IS61NF25632
IS61NLF25632
IS61NF25636
IS61NLF25636
IS61NF51218
IS61NLF51218
ISSI
INTERLEAVED BURST ADDRESS TABLE
(MODE = V
CC
)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE
(MODE = GND)
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
BIAS
T
STG
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to GND for I/O Pins
V
IN
Voltage Relative to GND for
for Address and Control Inputs
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or
electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3.
This device contains circuitry that will ensure the output devices are in High-Z at power up.
Parameter
Temperature Under Bias
Storage Temperature
Power Dissipation
Output Current (per I/O)
Value
–
10 to +85
–
65 to +150
1.6
100
–
0.5 to V
CCQ
+ 0.3
–
0.3 to 4.6
Unit
°
C
°
C
W
mA
V
V
0,0
1,0
0,1
A1', A0' = 1,1
相關PDF資料
PDF描述
IS61NF25636 SRAM
IS61NLF25632 SRAM
IS61NLF25636 SRAM
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