參數(shù)資料
型號(hào)： IS62C1024AL
廠(chǎng)商： Integrated Silicon Solution, Inc.
英文描述： 128K x 8 LOW POWER CMOS STATIC RAM
中文描述： 128K的× 8低功耗CMOS靜態(tài)RAM
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 423K
代理商： IS62C1024AL
Integrated Circuit Solution Inc.
3
SR016-0B
IS62C1024
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to +7.0
V
T
BIAS
Temperature Under Bias
–10 to +85
°C
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –1.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 2.1 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns
Min. Max.
-45 ns
Min. Max.
-55 ns
Min. Max.
-70 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
CE
= V
IL
Com.
—
150
—
135
—
120
—
90
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
—
160
—
145
—
130
—
100
I
SB
1
TTL Standby Current
V
CC
= Max.,
V
IN
= V
IH
or V
IL
,
CE1
≥
V
IH
,
or CE2
≤
V
IL
, f = 0
Com.
—
40
—
40
—
40
—
40
mA
(TTL Inputs)
Ind.
—
60
—
60
—
60
—
60
I
SB
2
CMOS Standby
V
CC
= Max.,
CE1
≥
V
CC
– 0.2V,
CE2
≤
0.2V, V
IN
> V
CC
– 0.2V,
or V
IN
≤
0.2V, f = 0
Com.
—
30
—
30
—
30
—
30
mA
Current (CMOS Inputs)
Ind.
—
40
—
40
—
40
—
40
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
相關(guān)PDF資料
PDF描述
IS62C1024-35QI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55QI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62LV12816LL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816L 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS62C1024AL-35Q 制造商:Integrated Silicon Solution Inc 功能描述:
IS62C1024AL-35QI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128K x 8 35ns 5v Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 5v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62C1024AL-35QI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128K x 8 35ns 5v Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 5v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62C1024AL-35QLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128K x 8 35ns 5v Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 5v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62C1024AL-35QLI 制造商:Integrated Silicon Solution Inc 功能描述:SRAM 1MB 128K X 8 5V 35NS 61C1024
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